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Plenary and Invited Speakers


ICPS-28, Plenary Speakers
L. Samuelson Lund Univ., Sweden Semiconductor Nanowires: from self-assembly to quantum devices
R. Chau Intel, USA Frontiers in Device and Process Nanotechnology
A. Geim Univ. Manchester, UK Electronic Properties of Graphene
S. Noda Univ. Kyoto, Japan Photonic Crystals for Manipulation of Photons
C. Marcus Harvard Univ., USA Quantum Control of Spin in a Two-Electron Double Dot
S. Tarucha Univ. Tokyo, Japan Control over spin configurations and correlation effects in quantum dots
A. Imamoglu ETH Zurich, Switzerland Semiconductor cavity quantum electrodynamics for quantum information processing
B. Halperin Harvard Univ., USA Spin-Charge Separation, Tunneling, and Spin Transport in One-Dimensional Metals
ICPS-28, Invited Speakers
Pablo Jarillo-Herrero Kavli Inst. Delft, The Netherlands Quantum dots in carbon nanotubes
Phaedon Avouris IBM, New York, USA Carbon nanotube electronics and optoelectronics
Le Si Dang Univ. J. Fourier, Grenoble, France Towards Bose-Einstein condensation of microcavity polaritons ?
Khaled Karrai Univ. Munich, Germany Laser cooling of a microlever
Ulrike Woggon Univ. Dortmund, Germany Single semiconductor nanocrystals: physics and applications
G. Yusa NTT Basic Research Laboratories, Atsugi, Japan Nuclear spin control by a point contact
Bahram Jalali UCLA, Dept. of Electrical Engineering, USA Raman based Mid-IR Si-photonics
David Williams Hitachi Cambridge Laboratory, UK Charge q-bit operation of an isolated double quantum dot
Jonathan J. Finley TU Munich, Germany Probing charge and spin excitations in quantum dot molecules
Vittorio Pellegrini Scuola Normale Superiore, Pisa, Italy 'Seeing' emergent phases in quantum Hall double layers
Daniel Loss University of Basel, Switzerland Quantum computation with quantum dots
Andrew Shields Toshiba, Cambridge, UK Single photon technology based on quantum dots
Lu J. Sham UC- San Diego, USA University of Hongkong Optical control of spins in semiconductor quantum dots
Pascale Senellart LPN Marcoussis, France Strong coupling regime for a single quantum dot in an optical microcavity
Lucien Besombes CNRS Grenoble, France Optical probing of the spin state of a single magnetic atom in a self-assembled quantum dot
Vanessa Sih Univ. of California at Santa Barbara, USA Imaging and controlling the spin Hall effect in two-dimensional electron gases
Carlo Sirtori Univ. Paris 7, France Terahertz generation and frequency mixing in quantum cascade structures
M. Kawasaki Tohoku University, Japan ZnO ultraviolet light-emitting diodes
Karl Leo Univ. Dresden, Germany Highly efficient Organic Semiconductor Devices
S. C. Crooker Los Alamos National Laboratory, USA Imaging spin transport in lateral ferromagnet/semiconductor structures
Henning Riechert Infineon, Munich, Germany Growth and material physics of InGaAsN for novel devices
Nikolay Akopian Physics Department, Technion - Israel Institute of Technology, Haifa, Israel Entangled Photon Pairs from Semiconductor Quantum Dots
Marilia Caldas Instituto de Física, Universidade de São Paulo, Cidade Universitária, São Paulo, Brazil Trimming and taming silicon surfaces: a first-principles study
Guillaume Cassabois Laboratoire Pierre Aigrain - Ecole Normale Supérieure, Paris, France Motional narrowing in a semiconductor quantum dot
Cristiano Ciuti Laboratoire Pierre Aigrain, Ecole Normale Supérieure, Paris, France Cavity quantum electrodynamics of semiconductor intersubband transitions in the ultra-strong vacuum Rabi coupling regime
Klaus Ensslin Solid State Physics Laboratory, ETH Zurich, ETH Hönggerberg, Zurich, Switzerland Is inelastic tunneling phase coherent?
Grzegorz Grabecki Institute of Physics, Polish Academy of Sciences, Warszawa, Poland Ballistic transport in hybrid nanostructures of paraelectric PbTe
Wolfgang Heiss Institut für Halbleiter-und Festkörperphysik, Universität Linz, Austria Quantum dots with coherent interfaces between rocksalt-PbTe and zincblende-CdTe
Shahal Ilani Laboratory of Atomic and Solid State Physics, Cornell University, USA Measurement of the Quantum Capacitance of Individual Carbon Nanotubes
Karl Fredrik Karlsson Institut de Photonique et Electronique Quantiques, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland New Excitonic States Observed in Semiconductor Quantum Dots Using Polarization Resolved Optical Spectroscopy
Frank Koppens Kavli Institute of NanoScience, Delft University of Technology, Delft, The Netherlands Coherent manipulation of single electron spins by electron spin resonance in coupled quantum dots
Peter Kratzer Fritz-Haber-Institut der MPG, Berlin, Germany Transition-metal silicides as novel materials for magnet-semiconductor heterostructures
Izhar Neder Braun Center for Submicron Research, Dept. of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel Controlled Dephasing and Phase Recovery via Cross-Correlation Measurements
Massimo Rontani CNR-INFM National Research Center S3, c/o Dept of Physics, University of Modena, Italy Imaging correlated wave functions of few-electron quantum dots: Theory and STS experiments
Giacomo Scalari Institute of Physics, University of Neuchatel, Switzerland Multi-wavelength operation and vertical emission in THz quantum-cascade lasers
Takeharu Sekiguchi Department of Applied Physics and Physico-Informatics, KEIO University, Yokohama, Japan Self-assembly of periodic nano-dots of silicon and germanium on a vicinal silicon (111) surface
Hadar Steinberg Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel Unidirectional Injection and Relaxation of Ballistic electrons in Clean Quantum Wires
Kyoichi Suzuki NTT Basic Research Laboratories, NTT Corporation, Atsugi-shi, Kanagawa, Japan Observation of subband standing waves in superlattices by low-temperature scanning tunneling spectroscopy
Kazuya Takemoto Fujitsu Laboratories. Ltd., Atsugi, Japan A New Approach for Single-Photon Source using Quantum Dots at Telecommunication Wavelength
Mike Thewalt Department of Physics, Simon Fraser University, Burnaby, British Columbia, Canada Direct Observation of the Donor Nuclear Spin in a Near-Gap Bound Exciton Transition: 31P in Highly Enriched 28Si
Vladislav Timofeev Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow, Russia Collective state in bose-gas of interacting interwell excitons
Jose Maria Ulloa COBRA - Eindhoven University of Technology, Eindhoven, The Netherlands Capping of InAs quantum dots studied by cross-sectional scanning tunneling microscopy
Chris Van de Walle Materials Department, University of California at Santa Barbara, USA Electronic structure of nitride surfaces
Luis Vina Departamento de Fisica de Materiales, C-IV-510, Universidad Autonoma Madrid, Spain Photoluminescence dynamics in GaAs along an optically induced Mott transition




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